Pattern Transfer Using The Lift-Off Technique

• For the lift off technique the patterned resist film is formed first followed by a blanket deposition of the layer.

• Dissolving away the resist then “lifts off” the unwanted material.

• Among its disadvantages is a rounded feature profile because of shadowing.

• Also it has temperature limitations, as the deposition technique is limited to temperature below 200-300°C, at which point resist begins to degrade.

• For these reasons most patterns are transferred using the etching techniques.[2]

Fig. 4 Shows the resist /deposition strip sequence of the lift off. [2]