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1.
For growth of an oxide of thickness 0.5 microns, what thickness of silicon
is consumed:
2.
When diffusivity is very small, the oxidation rate depends on the supply
of oxidant to the interface and the process is called:
3.
Which of the following has a higher breakdown voltage:
4.
Wet oxidation has a significantly higher oxidation rate than dry oxidation.
5.
Which of the following is used for masking oxide, blanket field oxide
and the LOCOS oxide:
6.
Oxide growth rate depends on (please choose the most accurate answer):
7.
Heavily doped silicon is oxidized faster than lightly doped silicon:
8.
Low-pressure increases oxidation rate:
9.
Which of the following affect thin oxide growth:
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