The number of implanted ions per unit area is termed dose:

True
False

Which of the following ion stopping mechanism is responsible for most damage to the crystal structure:

Electronic stopping
Nuclear stopping

Nuclear stopping is inelastic in nature:

True
False

For heavy ions which of the two mechanisms dominate:

Nuclear collision
Electronic collision

Implanted profile in a silicon wafer can be described mathematically by an:

Error function distribution
Gaussian distribution function

Given that the peak concentration of the implanted dose is 1018/cm3 and standard deviation is 4.0X10-6 cm, the implanted dose is:

1012/cm2
1010/cm2
1013/cm2

Gaussian distributions have a skewness of 0 and kurtosis of:

2
3
5
4

Kurtosis measures the:

Asymmetry of the distribution
Flatness of the top of the distribution

Furnace annealing has times on the order of:

Seconds
Minutes
Nanoseconds